features marking: 1 h igh diode semiconductor sot- 23 ?? ? symbol parameter value unit v collector-base voltage -50 v v ce o collector-emitter voltage -30 v v eb o emitter-base voltage -5 v i c co llector current p c co llector power dissipation 310 mw r j a thermal resistance from junction to ambient 403 /w t j jun ction temperature 150 t st g storage temperature -55 +150 electrical characteristics (ta =25 unless otherwise specified 589 sot -23 plastic-encap sulate transistors transistor( p np ) -1 a cbo e b c MMBT589 high current surface mount pnp s ilicon switching transistor for load management in portable applications parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-100 a,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a collector-emitter cut-off current i ces v ces =-30v -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe1 v ce =-2v,i c =-1ma 100 h fe2 v ce =-2v,i c =-500ma 100 300 h fe3 v ce =-2v,i c =-1a 80 dc current gain h fe4 v ce =-2v,i c =-2a 40 v ce(sat)1 i c = -500ma, i b =-50ma -0.25 v v ce(sat)2 i c = -1a, i b =-100ma -0.3 v collector-emitter saturation voltage v ce(sat)3 i c = -2a, i b =-200ma -0.65 v base-emitter saturation voltage v be(sat) i c = -1a, i b =-100ma -1.2 v base-emitter turn-on voltage v be(on) v ce =-2v, i c =-1a -1.1 v transition frequency f t v ce =-5v, i c =-100ma , f =100mhz 100 mhz collector output capacitance c ob f=1mhz 15 pf
typical characteristics 2 h igh diode semiconductor 0 25 50 75 100 125 150 0 100 200 300 400 500 -200 -400 -600 -800 -1000 -0.1 -1 -10 -100 -1000 -0.1 -1 -10 -100 -1000 10 100 1000 -1 -10 -100 -1000 -0 -200 -400 -600 -800 -1000 -10 -100 10 100 -1 -10 -100 -1000 -1 -10 -100 -1000 -0.1 -1 -10 1 10 100 1000 -0 -1 -2 -3 -4 -5 -6 -0 -200 -400 -600 -800 -1000 -1200 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a = 1 0 0 common emitter v ce = -2v i c ?? v be base-emmiter voltage v be (mv) collector current i c (ma) t a = 2 5 common emitter v ce = -2v t a =100 t a =25 h fe ?? i c dc current gain h fe collector current i c (ma) 200 =10 v besat ?? i c base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 common emitter vce=-5v t a =25 f t ?? i c collector current i c (ma) transition frequency f t (mhz) t a =100 t a =25 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) -3 -20 f=1mhz i c =0/i e =0 t a =25 v cb /v eb c ob /c ib ?? cob cib collector-base voltage v cb /v eb (v) capacitance c t (pf) static characteristic -3.2ma common emitter t a =25 collector current i c (ma) collector-emitter voltage v ce (v) -4ma -3.6ma -2.8ma -1.2ma -2ma -2.4ma -1.6ma -0.8ma i b =-0.4ma
3 jshd jshd h igh diode semiconductor package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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